Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: Breakdown voltage prediction for air gaps is a crucial topic in high-voltage insulation research. Building upon existing studies and fundamental theories, the authors identify the gap ...
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