The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...
A technical paper titled “Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs” was published by researchers at University of Stuttgart, Indian Institute of Technology ...
SEMICON West was held last week in San Francisco and I had the opportunity to attend the Emerging Architectures session. Serge Biesemans, vice president of process technology at Imec, gave a nice ...
SANTA CLARA, Calif., Sept. 24, 2024 (GLOBE NEWSWIRE) -- Silvaco Group, Inc. (SVCO) (Nasdaq: SVCO, “Silvaco” or the “Company”), a provider of TCAD, EDA software, and SIP solutions that enable ...
SAN FRANCISCO — Even before Gordon Moore delivers his keynote to the 50th annual International Solid State Circuits Conference (ISSCC) here, technologists were debating the merits of the IC ...
FinFET technology enabled lower leakage, reduced short-channel effects, and better performance at reduced voltages. It successfully extended CMOS scaling from the 22nm node through the 7nm generation ...
November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...
Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has ...
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